Crystals

^Вверх

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Спектрометры и рефлектометры

Терагерцовые компоненты

Генераторы

Фотопроводящие антенны

Оптические элементы

CDP Corp. produces and supplies components for optoelectronic devices, detectors and microelectronics:

A2B6 SINGLE CRYSTALS

A2B6 Single Crystalline materials in ingots and wafers or other forms according to customers demands:

Zinc Sulfide

Zinc Selenide

Zinc Telluride

Cadmium Sulfide

Cadmium Selenide

Cadmium Sulphoselenide

Single crystals are grown by Seeded Vapor-Phase Free Growth Technology. The purity of the crystals is higher then 6N. By request, post growth annealing under Zn, Cd, S, Se partial pressure is provided to control of specific resistivity.  Doping by In, Al, Cr, Fe, Ni and others impurities is also available.

BULK CRYSTALS

ZnS, max. ingot sizes(diameter x height, mm): 40 x15, growth direction: <111>, structure:cubic, lattice parameters: a=5.4093, Specific Resistivity(Ohm x cm):

1x10^8...1x10^12, Hall Mobility(cm^2/(V x sec):140 (e)

ZnSe, max. ingot sizes(diameter x height, mm): 55 x15, growth direction: <111> or <100>, structure:cubic, lattice parameters: a=5.6687,Specific Resistivity(Ohm x cm):1x10^8...1x10^12(undoped),5x10^-2...1x10^6(doped), Hall Mobility(cm^2/(V x sec):400 (e)

ZnTe, max. ingot sizes(diameter x height, mm): 40 x15, growth direction: <111>, structure:cubic, lattice parameters:a=6.1034,Specific Resistivity(Ohm x cm):

1X10^6, Hall Mobility(cm^2/(V x sec):130 (h)